[C-9-2] Excellent Ferroelectric Properties in PZT Capacitor Cell with Thin SRO Film in Both Top and Bottom Electrodes

T. Morimoto、O. Hidaka、K. Yamakawa、O. Arisumi、H. Kanaya、T. Iwamoto、Y. Kumura、I. Kunishima、S. Tanaka (1.Microelectronics Engineering Laboratory, Toshiba Corporation, Semiconductor company、2.Corporate Manufacturing Engineering Center, Toshiba Corporation)

https://doi.org/10.7567/SSDM.1999.C-9-2