Low Voltage Saturation of a PZT Film on (100) Ir / (100) YSZ/ (100)Si Substrate Structure Prepared by Reactive Sputtering

S. Horii; S. Yokoyama; T. Kuniya; S. Horita

doi:https://doi.org/10.7567/SSDM.1999.C-9-3

[C-9-3] Low Voltage Saturation of a PZT Film on (100) Ir / (100) YSZ/ (100)Si Substrate Structure Prepared by Reactive Sputtering

S. Horii, S. Yokoyama, T. Kuniya, S. Horita (1.Japan Advanced Institutes of Science and Technology, School of Material Science, Japan, 2.Delegated from Kokusai Electric Co., Ltd.)

https://doi.org/10.7567/SSDM.1999.C-9-3

1999 International Conference on Solid State Devices and Materials

[C-9-3] Low Voltage Saturation of a PZT Film on (100) Ir / (100) YSZ/ (100)Si Substrate Structure Prepared by Reactive Sputtering