Low Voltage Saturation of a PZT Film on (100) Ir / (100) YSZ/ (100)Si Substrate Structure Prepared by Reactive Sputtering

S. Horii; S. Yokoyama; T. Kuniya; S. Horita

doi:https://doi.org/10.7567/SSDM.1999.C-9-3

[C-9-3] Low Voltage Saturation of a PZT Film on (100) Ir / (100) YSZ/ (100)Si Substrate Structure Prepared by Reactive Sputtering

S. Horii、S. Yokoyama、T. Kuniya、S. Horita (1.Japan Advanced Institutes of Science and Technology, School of Material Science, Japan、2.Delegated from Kokusai Electric Co., Ltd.)

https://doi.org/10.7567/SSDM.1999.C-9-3

1999 International Conference on Solid State Devices and Materials

[C-9-3] Low Voltage Saturation of a PZT Film on (100) Ir / (100) YSZ/ (100)Si Substrate Structure Prepared by Reactive Sputtering