Low Voltage Operation of the Ferroelectric Pb(Zr, Ti)O3 Capacitors Derived by Sol-Gel Method

Yoshikazu Fujimori; Toshiyuki Takeda; Takashi Nakamura; Hidemi Takasu

doi:https://doi.org/10.7567/SSDM.1999.C-9-4

1999 International Conference on Solid State Devices and Materials

1999年9月21日〜 1999年9月24日
Nihon Toshi Center Kaikan, Tokyo, Japan

[C-9-4] Low Voltage Operation of the Ferroelectric Pb(Zr, Ti)O3 Capacitors Derived by Sol-Gel Method

Yoshikazu Fujimori、Toshiyuki Takeda、Takashi Nakamura、Hidemi Takasu (1.Device Technology Div., Semiconductor Research and Development Headquarters, ROHM CO., LTD.)

https://doi.org/10.7567/SSDM.1999.C-9-4

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