[D-12-1] InGaP Channel FET with High Breakdown Voltage

Naoki Hara, Yasuhiro Nakasha, Toshihide Kikkawa, Kazukiyo Joshin, Yuu Watanabe Hitoshi Tanaka, Masahiko Takikawa (1.Fujitsu Laboratories Ltd.)

https://doi.org/10.7567/SSDM.1999.D-12-1