Current Hysteresis in a Delta Doped GaAs Metal-Semiconductor Field Effect Transistor

F. Sabri; K. Tsukagoshi; D. G. Hasko

doi:https://doi.org/10.7567/SSDM.1999.D-14-2

1999 International Conference on Solid State Devices and Materials

Sep 21, 1999 - Sep 24, 1999
Nihon Toshi Center Kaikan, Tokyo, Japan

[D-14-2] Current Hysteresis in a Delta Doped GaAs Metal-Semiconductor Field Effect Transistor

F. Sabri, K. Tsukagoshi, D. G. Hasko (1.Microelectronics Research Centre, Cavendish Laboratory, University of Cambridge, 2.Hitachi Cambridge Laboratory)

https://doi.org/10.7567/SSDM.1999.D-14-2

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