Area-Controlled Growth of InAs Quantum Dots by Selective MOCVD

J. Tatebayashi; S. Ishida; M. Nishioka; T. Someya; Y. Arakawa

doi:https://doi.org/10.7567/SSDM.1999.D-9-2

1999 International Conference on Solid State Devices and Materials

Sep 21, 1999 - Sep 24, 1999
Nihon Toshi Center Kaikan, Tokyo, Japan

[D-9-2] Area-Controlled Growth of InAs Quantum Dots by Selective MOCVD

J. Tatebayashi, S. Ishida, M. Nishioka, T. Someya, Y. Arakawa (1.Research Center for Advanced Science and Technology, University of Tokyo, 2.Institute of Industrial Science, University of Tokyo)

https://doi.org/10.7567/SSDM.1999.D-9-2

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