A Wafer-Level Burn-in Technology-Realization of Stable Contact Resistance for Al Bond Pads-

Yoshiro Nakata; Keiichi Fujimoto; Shinichi Oki; Akio Watakabe

doi:https://doi.org/10.7567/SSDM.1999.E-16-4

1999 International Conference on Solid State Devices and Materials

1999年9月21日〜 1999年9月24日
Nihon Toshi Center Kaikan, Tokyo, Japan

[E-16-4] A Wafer-Level Burn-in Technology-Realization of Stable Contact Resistance for Al Bond Pads-

Yoshiro Nakata、Keiichi Fujimoto、Shinichi Oki、Akio Watakabe (1.ULSI Process Technology Development Center, Semiconductor Company Matsushita Electronics Corporation)

https://doi.org/10.7567/SSDM.1999.E-16-4

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