GaInAsP/InP Multiple-Layered Quantum-Wire Lasers Fabricated by CH4/H2-Reactive-Ion-Etching

Nobuhiro Nunoya; Madoka Nakamura; Hideo Yasumoto; Shigeo Tamura; Shigehisa Arai

doi:https://doi.org/10.7567/SSDM.1999.E-5-3

1999 International Conference on Solid State Devices and Materials

Sep 21, 1999 - Sep 24, 1999
Nihon Toshi Center Kaikan, Tokyo, Japan

[E-5-3] GaInAsP/InP Multiple-Layered Quantum-Wire Lasers Fabricated by CH4/H2-Reactive-Ion-Etching

Nobuhiro Nunoya, Madoka Nakamura, Hideo Yasumoto, Shigeo Tamura, Shigehisa Arai (1.Research Center for Quantum Effect Electronics, Tokyo Institute of Technology)

https://doi.org/10.7567/SSDM.1999.E-5-3

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