GaInAsP/InP Multiple-Layered Quantum-Wire Lasers Fabricated by CH4/H2-Reactive-Ion-Etching

Nobuhiro Nunoya; Madoka Nakamura; Hideo Yasumoto; Shigeo Tamura; Shigehisa Arai

doi:https://doi.org/10.7567/SSDM.1999.E-5-3

1999 International Conference on Solid State Devices and Materials

1999年9月21日〜 1999年9月24日
Nihon Toshi Center Kaikan, Tokyo, Japan

[E-5-3] GaInAsP/InP Multiple-Layered Quantum-Wire Lasers Fabricated by CH4/H2-Reactive-Ion-Etching

Nobuhiro Nunoya、Madoka Nakamura、Hideo Yasumoto、Shigeo Tamura、Shigehisa Arai (1.Research Center for Quantum Effect Electronics, Tokyo Institute of Technology)

https://doi.org/10.7567/SSDM.1999.E-5-3

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