[LB-1-1] High Channel Mobility in Inversion Layer of SiC MOSFETs for Power Switching Transistors

Hiroshi Yano、Taichi Hirao、Tsunenobu Kimoto、Hiroyuki Matsunami (1.Department of Electronic Science and Engineering, Kyoto University)

https://doi.org/10.7567/SSDM.1999.LB-1-1