[LB-1-3] A TiO2 Gate Insulator of a 1-nm Equivalent Oxide Thickness Deposited by Electron-Beam Evaporation

Keiichi Haraguchi、Kazuyoshi Torii、Jiro Yugami、Takahiro Onai (1.Central Research Laboratory, Hitachi, Ltd.)

https://doi.org/10.7567/SSDM.1999.LB-1-3