Damage-Free Flattening Technology of Large Scale Si Wafer Employing Localized SF6/H2 Downstream Plasma

Michihiko Yanagisawa; Shinya Iida; Hiroki Ogawa; Yasuhiro Horiike

doi:https://doi.org/10.7567/SSDM.1999.LB-1-4

[LB-1-4] Damage-Free Flattening Technology of Large Scale Si Wafer Employing Localized SF6/H2 Downstream Plasma

Michihiko Yanagisawa, Shinya Iida, Hiroki Ogawa, Yasuhiro Horiike (1.Speedfam-IPEC Co., Ltd., 2.Development of Material Science, School of Engineering, University of Tokyo)

https://doi.org/10.7567/SSDM.1999.LB-1-4

1999 International Conference on Solid State Devices and Materials

[LB-1-4] Damage-Free Flattening Technology of Large Scale Si Wafer Employing Localized SF6/H2 Downstream Plasma