Damage-Free Flattening Technology of Large Scale Si Wafer Employing Localized SF6/H2 Downstream Plasma

Michihiko Yanagisawa; Shinya Iida; Hiroki Ogawa; Yasuhiro Horiike

doi:https://doi.org/10.7567/SSDM.1999.LB-1-4

1999 International Conference on Solid State Devices and Materials

1999年9月21日〜 1999年9月24日
Nihon Toshi Center Kaikan, Tokyo, Japan

[LB-1-4] Damage-Free Flattening Technology of Large Scale Si Wafer Employing Localized SF6/H2 Downstream Plasma

Michihiko Yanagisawa、Shinya Iida、Hiroki Ogawa、Yasuhiro Horiike (1.Speedfam-IPEC Co., Ltd.、2.Development of Material Science, School of Engineering, University of Tokyo)

https://doi.org/10.7567/SSDM.1999.LB-1-4

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