New Mechanisms and the Characterization of Plasma Charging Enhanced Hot Carrier Effect in Deep-Submicron N-MOSFET&apos;s

S. J. Chen; H. L. Kao; Steve S. Chung; C. C. Chen; C. Y. Chang; H. C. Lin

doi:https://doi.org/10.7567/SSDM.2000.A-1-2

2000 International Conference on Solid State Devices and Materials

2000年8月29日〜 2000年8月31日
Sendai International Center, Sendai, Japan

[A-1-2] New Mechanisms and the Characterization of Plasma Charging Enhanced Hot Carrier Effect in Deep-Submicron N-MOSFET's

S. J. Chen、H. L. Kao、Steve S. Chung、C. C. Chen、C. Y. Chang、H. C. Lin (1.Department of Electronic Engineering, National Chiao Tung University、2.National Nano Device Lab.)

https://doi.org/10.7567/SSDM.2000.A-1-2

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