The Japan Society of Applied Physics

[A-6-8] In-Situ Impurity Doping in Si1-x-yGexCy Epitaxial Growth Using Ultraclean LPCVD

D. Lee, T. Noda, H. Shim, M. Sakuraba, T. Matsuura, J. Murota (1.Laboratory for Electronic Intelligent Systems Research Institute of Electrical Communication, Tohoku University)

https://doi.org/10.7567/SSDM.2000.A-6-8