In-Situ Impurity Doping in Si1-x-yGexCy Epitaxial Growth Using Ultraclean LPCVD

D. Lee; T. Noda; H. Shim; M. Sakuraba; T. Matsuura; J. Murota

doi:https://doi.org/10.7567/SSDM.2000.A-6-8

2000 International Conference on Solid State Devices and Materials

2000年8月29日〜 2000年8月31日
Sendai International Center, Sendai, Japan

[A-6-8] In-Situ Impurity Doping in Si1-x-yGexCy Epitaxial Growth Using Ultraclean LPCVD

D. Lee、T. Noda、H. Shim、M. Sakuraba、T. Matsuura、J. Murota (1.Laboratory for Electronic Intelligent Systems Research Institute of Electrical Communication, Tohoku University)

https://doi.org/10.7567/SSDM.2000.A-6-8

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