[A-7-1] Retarding Mechanism of Si Selective Epitaxial Growth on CMOS Structure due to Doped Arsenic in the Si Substrate

Kiyotaka MIYANO、Ichiro MIZUSHIMA、Yoshitaka TSUNASHIMA (1.Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation)

https://doi.org/10.7567/SSDM.2000.A-7-1