[A-7-3] Characteristics of Boron and Arsenic Ultra-Shallow Junction Using Laser Annealing with Pre-Amorphization Implantation

C. M. Park、K. Min、S. D. Kim、S. A. Prussin、M. K. Han、J. C. S. Woo (1.Department of Electrical Engineering, University of California、2.School of Electrical Engineering, Seoul National University)

https://doi.org/10.7567/SSDM.2000.A-7-3