[A-7-3] Characteristics of Boron and Arsenic Ultra-Shallow Junction Using Laser Annealing with Pre-Amorphization Implantation

C. M. Park, K. Min, S. D. Kim, S. A. Prussin, M. K. Han, J. C. S. Woo (1.Department of Electrical Engineering, University of California, 2.School of Electrical Engineering, Seoul National University)

https://doi.org/10.7567/SSDM.2000.A-7-3