[B-2-6] Measurement of Hole Transport Parameters in Ultra-Thin SiGe Layers and Their Application in 2D Device Simulations of Heterojunction pMOSFETs

R. J. P. Lander、Y. V. Ponomarev、W. B. de Boer、R. Loo、M. Caymax (1.Philips Research Laboratories、2.IMEC)

https://doi.org/10.7567/SSDM.2000.B-2-6