[B-2-6] Measurement of Hole Transport Parameters in Ultra-Thin SiGe Layers and Their Application in 2D Device Simulations of Heterojunction pMOSFETs

R. J. P. Lander, Y. V. Ponomarev, W. B. de Boer, R. Loo, M. Caymax (1.Philips Research Laboratories, 2.IMEC)

https://doi.org/10.7567/SSDM.2000.B-2-6