Bandgap and Strain Engineering in SiGeC Heterojunction Bipolar Transistors

K. Yuki; K. Toyoda; T. Takagi; Y. Kanzawa; K. Nozawa; T. Saitoh; M. Kubo

doi:https://doi.org/10.7567/SSDM.2000.B-2-7

2000 International Conference on Solid State Devices and Materials

Aug 29, 2000 - Aug 31, 2000
Sendai International Center, Sendai, Japan

[B-2-7] Bandgap and Strain Engineering in SiGeC Heterojunction Bipolar Transistors

K. Yuki, K. Toyoda, T. Takagi, Y. Kanzawa, K. Nozawa, T. Saitoh, M. Kubo (1.Advanced Technology Research Lab., Matsushita Electric Industrial Co., Ltd.)

https://doi.org/10.7567/SSDM.2000.B-2-7

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