[B-7-3] SiO2/Si(111) Interface Structures Formed by Atomic Oxygen

K. Takahashi, H. Nohira, T. Nakamura, T. Ohmi, T. Hattori (1.Department of Electrical and Electronic Engineering, Musashi Institute of Technology, 2.New Industry Creation Hatchery Center, Tohoku University)

https://doi.org/10.7567/SSDM.2000.B-7-3