[C-3-4] Characterization of Ferroelectric Domain Behavior in MOCVD-PZT Capacitors for CMVP FeRAMs

Kimihiko Ito、Yasunori Mochizuki、Toru Tatsumi、Naoya Inoue、Hiromitsu Hada、Takashi Hase、Yoichi Miyasaka (1.System Devices and Fundamental Research, NEC Corporation、2.ULSI Device Development Division, NEC Electron Devices, NEC Corporation)

https://doi.org/10.7567/SSDM.2000.C-3-4