[C-3-4] Characterization of Ferroelectric Domain Behavior in MOCVD-PZT Capacitors for CMVP FeRAMs

Kimihiko Ito, Yasunori Mochizuki, Toru Tatsumi, Naoya Inoue, Hiromitsu Hada, Takashi Hase, Yoichi Miyasaka (1.System Devices and Fundamental Research, NEC Corporation, 2.ULSI Device Development Division, NEC Electron Devices, NEC Corporation)

https://doi.org/10.7567/SSDM.2000.C-3-4