Charging Damage of SOI Wafer Diagnosed by Scanning Maxwell-Stress Microscopy

T. Matsukawa; H. Fujii; S. Kanemaru; M. Nagao; H. Yokoyama; J. Itoh

doi:https://doi.org/10.7567/SSDM.2000.C-9-5

2000 International Conference on Solid State Devices and Materials

Aug 29, 2000 - Aug 31, 2000
Sendai International Center, Sendai, Japan

[C-9-5] Charging Damage of SOI Wafer Diagnosed by Scanning Maxwell-Stress Microscopy

T. Matsukawa, H. Fujii, S. Kanemaru, M. Nagao, H. Yokoyama, J. Itoh (1.Electrotechnical Laboratory, 2.Materials Research Laboratory, Kobe Steel, LTD.)

https://doi.org/10.7567/SSDM.2000.C-9-5

▲