Ridge Uniformity Improvement Toward Growth of Sub-10nm InGaAs Ridge Quantum Wires by Selective MBE on Patterned InP Substrate

Chao Jiang; Tsutomu Muranaka; Hideki Hasegawa

doi:https://doi.org/10.7567/SSDM.2000.D-5-3

[D-5-3] Ridge Uniformity Improvement Toward Growth of Sub-10nm InGaAs Ridge Quantum Wires by Selective MBE on Patterned InP Substrate

Chao Jiang、Tsutomu Muranaka、Hideki Hasegawa (1.Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido University)

https://doi.org/10.7567/SSDM.2000.D-5-3

2000 International Conference on Solid State Devices and Materials

[D-5-3] Ridge Uniformity Improvement Toward Growth of Sub-10nm InGaAs Ridge Quantum Wires by Selective MBE on Patterned InP Substrate