[D-8-2] Strain Relaxation Mechanism in the Growth of InAs on GaAs(110) Surfaces Studied by Scanning Tunneling Microscopy

Hiroshi Yamaguchi、Norihisa Oyama (1.NTT Basic Research Laboratories、2.Department of Applied Physics and Phisico-Infomatics, Keio University)

https://doi.org/10.7567/SSDM.2000.D-8-2