[D-9-2] High Linearity and High Power Device Fabricated by Al0.3Ga0.7As/In0.15Ga0.85As Double Doped-Channel Heterostructure

Feng-Tso Chien、Yi-Jen Chan (1.R&D DEPT., Chino-Excel Technology Corp.、2.Department of Electrical Engineering, National Central University)

https://doi.org/10.7567/SSDM.2000.D-9-2