[E-1-5] Passivation of Deep Levels in 3C-SiC on Si by a Hydrogen Plasma Treatment

Masashi Kato、Fumitaka Sobue、Masaya Ichimura、Eisuke Arai、Noboru Yamada、Yutaka Tokuda、Tsugunori Okumura (1.Department of Electrical and Computer Engineering, Nagoya Institute of Technology、2.Power Device Laboratory, Electronic Device Division, Toyota Central Research and Development Laboratories Inc.、3.Department of Electronics, Aichi Institute of Technology、4.Department of Electrical Engineering, Tokyo Metropolitan University)

https://doi.org/10.7567/SSDM.2000.E-1-5