[E-1-6] Radiation Hardness of Epitaxial and Non-Epitaxial 6H-SiC MOS Capacitors

Elder A. de Vasconcelos, Eronides F. da Silva Jr., Teruaki Katsube, Sadafumi Yoshida, Yasushiro Nishioka (1.Departamento de Fisica, Universidade Federal de Pernambuco, 2.Graduate School of Science and Engineering, Saitama University, 3.Texas Instruments Tsukuba Research & Development Center Ltd.)

https://doi.org/10.7567/SSDM.2000.E-1-6