Physics of GaN Based Electronic Devices

M. S. Shur; R. Gaska; Asif Khan

doi:https://doi.org/10.7567/SSDM.2000.E-2-1

2000 International Conference on Solid State Devices and Materials

2000年8月29日〜 2000年8月31日
Sendai International Center, Sendai, Japan

[E-2-1] Physics of GaN Based Electronic Devices

M. S. Shur、R. Gaska、Asif Khan (1.CIEEM and Department of ECSE, Rensselaer Polytechnic Institute、2.Sensor Electronic Technology, Inc.、3.Department of ECE, University of South Carolina)

https://doi.org/10.7567/SSDM.2000.E-2-1

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