Electronic Structure of InGaN Quantum Dots in GaN: Atomic Scale Calculations

Toshio Saito; Yasuhiko Arakawa

doi:https://doi.org/10.7567/SSDM.2000.E-2-3

2000 International Conference on Solid State Devices and Materials

Aug 29, 2000 - Aug 31, 2000
Sendai International Center, Sendai, Japan

[E-2-3] Electronic Structure of InGaN Quantum Dots in GaN: Atomic Scale Calculations

Toshio Saito, Yasuhiko Arakawa (1.Center for Collaborative Research, University of Tokyo, 2.Research Center for Advanced Science and Technology, University of Tokyo)

https://doi.org/10.7567/SSDM.2000.E-2-3

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