Electronic Structure of InGaN Quantum Dots in GaN: Atomic Scale Calculations

Toshio Saito; Yasuhiko Arakawa

doi:https://doi.org/10.7567/SSDM.2000.E-2-3

2000 International Conference on Solid State Devices and Materials

2000年8月29日〜 2000年8月31日
Sendai International Center, Sendai, Japan

[E-2-3] Electronic Structure of InGaN Quantum Dots in GaN: Atomic Scale Calculations

Toshio Saito、Yasuhiko Arakawa (1.Center for Collaborative Research, University of Tokyo、2.Research Center for Advanced Science and Technology, University of Tokyo)

https://doi.org/10.7567/SSDM.2000.E-2-3

▲