[E-2-6] AlGaN/GaN Heterojunction High Electron Mobility Transistors Using Ga-Polarity Crystal Growth by Plasma-Assisted Molecular Beam Epitaxy

Toshihide Ide、Mitsuaki Shimizu、Akira Suzuki、Xu-Qiang Shen、Hajime Okumura、Toshio Nemoto (1.Course in Electrical Engineering, Department of Science and Technology, Graduated School of Meiji University、2.Optoelectric Division, Electrotechnical Laboratory、3.Course of Electronics, Graduate School of Engineering, Tokai University)

https://doi.org/10.7567/SSDM.2000.E-2-6