[E-2-6] AlGaN/GaN Heterojunction High Electron Mobility Transistors Using Ga-Polarity Crystal Growth by Plasma-Assisted Molecular Beam Epitaxy

Toshihide Ide, Mitsuaki Shimizu, Akira Suzuki, Xu-Qiang Shen, Hajime Okumura, Toshio Nemoto (1.Course in Electrical Engineering, Department of Science and Technology, Graduated School of Meiji University, 2.Optoelectric Division, Electrotechnical Laboratory, 3.Course of Electronics, Graduate School of Engineering, Tokai University)

https://doi.org/10.7567/SSDM.2000.E-2-6