Optimum Device Parameters and Scalability of Variable Threshold CMOS (VTCMOS)

T. Hiramoto; M. Takamiya; H. Koura; T. Inukai; H. Gomyo; H. Kawaguchi; T. Sakurai

doi:https://doi.org/10.7567/SSDM.2000.E-5-1

[E-5-1] Optimum Device Parameters and Scalability of Variable Threshold CMOS (VTCMOS)

T. Hiramoto, M. Takamiya, H. Koura, T. Inukai, H. Gomyo, H. Kawaguchi, T. Sakurai (1.Institute of Industrial Science, University of Tokyo, 2.VLSI Design and Education Center, University of Tokyo, 3.Center for Collaborative Research, University of Tokyo)

https://doi.org/10.7567/SSDM.2000.E-5-1

2000 International Conference on Solid State Devices and Materials

[E-5-1] Optimum Device Parameters and Scalability of Variable Threshold CMOS (VTCMOS)