Ultra-Low Standby Current in SOI-CMOS LSI Circuits by Using Body-Bias-Control Technology

K. Higashi; T. Ohmi; A. O. Adan; H. Morimoto; K. Niimi; T. Ashida; S. Sugawa

doi:https://doi.org/10.7567/SSDM.2000.E-5-3

2000 International Conference on Solid State Devices and Materials

2000年8月29日〜 2000年8月31日
Sendai International Center, Sendai, Japan

[E-5-3] Ultra-Low Standby Current in SOI-CMOS LSI Circuits by Using Body-Bias-Control Technology

K. Higashi、T. Ohmi、A. O. Adan、H. Morimoto、K. Niimi、T. Ashida、S. Sugawa (1.IC Development Group, SHARP Corp.、2.Department of Electronic Eng., Graduate School of Eng., Tohoku University)

https://doi.org/10.7567/SSDM.2000.E-5-3

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