Ultra-Low Standby Current in SOI-CMOS LSI Circuits by Using Body-Bias-Control Technology

K. Higashi; T. Ohmi; A. O. Adan; H. Morimoto; K. Niimi; T. Ashida; S. Sugawa

doi:https://doi.org/10.7567/SSDM.2000.E-5-3

[E-5-3] Ultra-Low Standby Current in SOI-CMOS LSI Circuits by Using Body-Bias-Control Technology

K. Higashi, T. Ohmi, A. O. Adan, H. Morimoto, K. Niimi, T. Ashida, S. Sugawa (1.IC Development Group, SHARP Corp., 2.Department of Electronic Eng., Graduate School of Eng., Tohoku University)

https://doi.org/10.7567/SSDM.2000.E-5-3

2000 International Conference on Solid State Devices and Materials

[E-5-3] Ultra-Low Standby Current in SOI-CMOS LSI Circuits by Using Body-Bias-Control Technology