[E-6-2] Effect of Ti Silicidation on fmax and Base Resistance of SiGe Hetero-Junction Bipolar Transistors

Seung-Yun Lee、Hong-Seung Kim、Kyu-Hwan Shim、Jin-Yeong Kang (1.SiGe Devices Team, Micro-Electronics Technology Laboratory, Electronics and Telecommunications Research Institute)

https://doi.org/10.7567/SSDM.2000.E-6-2