Reduction of ROn in Vertical Power-MOSFETs due to Local Channel Doping

C. Fink; J. Schulze; I. Eisele; W. Hansch; W. Werner; W. Kanert

doi:https://doi.org/10.7567/SSDM.2000.LB-1-2

[LB-1-2] Reduction of ROn in Vertical Power-MOSFETs due to Local Channel Doping

C. Fink, J. Schulze, I. Eisele, W. Hansch, W. Werner, W. Kanert (1.Institute of Physics, University of the German Federal Armed Forces, 2.Department of Electrical Engineering, Technical University of Munich, 3.Infineon Technologies AG)

https://doi.org/10.7567/SSDM.2000.LB-1-2

2000 International Conference on Solid State Devices and Materials

[LB-1-2] Reduction of ROn in Vertical Power-MOSFETs due to Local Channel Doping