[LE-1-2] Recessed Gate AlGaN/GaN HEMT on Sapphire Grown by MOCVD

Takashi Egawa、Hiroyasu Ishikawa、Gangyuan Zhao、Masayoshi Umeno (1.Research Center for Micro-Structure Devices, Nagoya Institute of Technology)

https://doi.org/10.7567/SSDM.2000.LE-1-2