Intrinsic Gettering In Nitrogen Doped and Hydrogen Annealed Czochralski-Grown Silicon Wafers

Hiroyuki Goto; Lian-Sheng Pan; Masafumi Tanaka; Kazuhiko Kashima

doi:https://doi.org/10.7567/SSDM.2000.LE-2-1

[LE-2-1] Intrinsic Gettering In Nitrogen Doped and Hydrogen Annealed Czochralski-Grown Silicon Wafers

Hiroyuki Goto、Lian-Sheng Pan、Masafumi Tanaka、Kazuhiko Kashima (1.Silicon Development, Silicon Division, Toshiba Ceramics Co., Ltd.、2.R&D Center, Toshiba Ceramics Co., Ltd.、3.Technical application, Silicon Division, Toshiba Ceramics Co., Ltd.)

https://doi.org/10.7567/SSDM.2000.LE-2-1

2000 International Conference on Solid State Devices and Materials

[LE-2-1] Intrinsic Gettering In Nitrogen Doped and Hydrogen Annealed Czochralski-Grown Silicon Wafers