[A-2-1] Ruthenium Film Etching and Cleaning Process Using Cerium Ammonium Nitrate (CAN)-Nitric Acid
H. Aoki, K. Watanabe, T. Iizuka, N. Ishikawa, K. Mori
(1.ULSI Device Development Division, NEC Corporation, 2.Central Research Laboratory, KANTO CHEMICAL CO., INC.)
https://doi.org/10.7567/SSDM.2001.A-2-1
