Ruthenium Film Etching and Cleaning Process Using Cerium Ammonium Nitrate (CAN)-Nitric Acid

H. Aoki; K. Watanabe; T. Iizuka; N. Ishikawa; K. Mori

doi:https://doi.org/10.7567/SSDM.2001.A-2-1

2001 International Conference on Solid State Devices and Materials

2001年9月26日〜 2001年9月28日
Diamond Hotel, Tokyo, Japan

[A-2-1] Ruthenium Film Etching and Cleaning Process Using Cerium Ammonium Nitrate (CAN)-Nitric Acid

H. Aoki、K. Watanabe、T. Iizuka、N. Ishikawa、K. Mori (1.ULSI Device Development Division, NEC Corporation、2.Central Research Laboratory, KANTO CHEMICAL CO., INC.)

https://doi.org/10.7567/SSDM.2001.A-2-1

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