[A-2-6] A Thermally Robust Ti-Rich TiNx Contact Metallization Realizing an Interconnect System Suitable to 0.10-μm DRAMs and Beyond
Isamu Asano、Yoshitaka Nakamura、Hideo Aoki、Naoki Fukuda、Satoru Yamada、Toshihiro Sekiguchi
(1.ELPIDA MEMORY, Inc.、2.Device Development Center, Hitachi Ltd.、3.Semiconductor Group, Hitachi Ltd.)
https://doi.org/10.7567/SSDM.2001.A-2-6