A Thermally Robust Ti-Rich TiNx Contact Metallization Realizing an Interconnect System Suitable to 0.10-μm DRAMs and Beyond

Isamu Asano; Yoshitaka Nakamura; Hideo Aoki; Naoki Fukuda; Satoru Yamada; Toshihiro Sekiguchi

doi:https://doi.org/10.7567/SSDM.2001.A-2-6

[A-2-6] A Thermally Robust Ti-Rich TiNx Contact Metallization Realizing an Interconnect System Suitable to 0.10-μm DRAMs and Beyond

Isamu Asano、Yoshitaka Nakamura、Hideo Aoki、Naoki Fukuda、Satoru Yamada、Toshihiro Sekiguchi (1.ELPIDA MEMORY, Inc.、2.Device Development Center, Hitachi Ltd.、3.Semiconductor Group, Hitachi Ltd.)

https://doi.org/10.7567/SSDM.2001.A-2-6

2001 International Conference on Solid State Devices and Materials

[A-2-6] A Thermally Robust Ti-Rich TiNx Contact Metallization Realizing an Interconnect System Suitable to 0.10-μm DRAMs and Beyond