[A-2-7] 240-nm Pitch Aluminum Interconnects Formation by UHF-ECR Plasma Etching Incorporating TM Bias and Novel-Gas Chemistry
Naoyuki Kofuji, Takashi Tsutsumi, Eiji Matsumoto, Kotaro Fujimoto, Naoshi Itabashi, Masaru Izawa, Takashi Fujii, Shin'ichi Tachi
(1.Central Research Laboratory, Hitachi, Ltd., 2.Kasado Semiconductor Equipment Product Division, Hitachi, Ltd., 3.Hitachi Techno Eng. Co., Ltd.)
https://doi.org/10.7567/SSDM.2001.A-2-7
