240-nm Pitch Aluminum Interconnects Formation by UHF-ECR Plasma Etching Incorporating TM Bias and Novel-Gas Chemistry

Naoyuki Kofuji; Takashi Tsutsumi; Eiji Matsumoto; Kotaro Fujimoto; Naoshi Itabashi; Masaru Izawa; Takashi Fujii; Shin'ichi Tachi

doi:https://doi.org/10.7567/SSDM.2001.A-2-7

[A-2-7] 240-nm Pitch Aluminum Interconnects Formation by UHF-ECR Plasma Etching Incorporating TM Bias and Novel-Gas Chemistry

Naoyuki Kofuji、Takashi Tsutsumi、Eiji Matsumoto、Kotaro Fujimoto、Naoshi Itabashi、Masaru Izawa、Takashi Fujii、Shin'ichi Tachi (1.Central Research Laboratory, Hitachi, Ltd.、2.Kasado Semiconductor Equipment Product Division, Hitachi, Ltd.、3.Hitachi Techno Eng. Co., Ltd.)

https://doi.org/10.7567/SSDM.2001.A-2-7

2001 International Conference on Solid State Devices and Materials

[A-2-7] 240-nm Pitch Aluminum Interconnects Formation by UHF-ECR Plasma Etching Incorporating TM Bias and Novel-Gas Chemistry